SUBSTRATE BIAS EFFECT ON DIAMOND DEPOSITION BY DC PLASMA-JET

被引：24

作者：

MATSUMOTO, S

HOSOYA, I

CHOUNAN, T

机构：

[1] National Institute for Research in Inorganic Materials, Tsukuba-shi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期

关键词：

Bias effect; Chemical vapor deposition; De arc; De plasma jet; Plasma CVD; diamond film;

D O I：

10.1143/JJAP.29.2082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By applying positive bias voltage to a substrate in diamond CVD by a dc plasma jet of the Ar-H2-CH4system, the deposition rate increased more than twofold, and the maximum rate of 15 µm/min was obtained. The deposition area also increased but the uniformity of film thickness did not improve. Applying the bias voltage to a ring electrode around the substate increased the deposition rate by nearly the same amount without increasing the substrate temperature. © 1990 IOP Publishing Ltd.

引用

页码：2082 / 2086

页数：5

共 8 条

[1] RAPID GROWTH OF DIAMOND FILMS BY ARC-DISCHARGE PLASMA CVD [J].