Fully valley-polarized electron beams in graphene

被引:197
作者
Garcia-Pomar, J. L. [1 ]
Cortijo, A. [1 ]
Nieto-Vesperinas, M. [1 ]
机构
[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
关键词
D O I
10.1103/PhysRevLett.100.236801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We propose a device to break the valley degeneracy in graphene and produce fully valley-polarized currents that can be either split or collimated to a high degree in a experimentally controllable way. The proposal combines two recent seminal ideas: negative refraction and the concept of valleytronics in graphene. The key new ingredient lies in the use of the specular shape of the Fermi surface of the two valleys when a high electronic density is induced by a gate voltage (trigonal warping). By changing the gate voltage in a n-p-n junction of a graphene transistor, the device can be used as a valley beam splitter, where each of the beams belong to a different valley, or as a collimator. The result is demonstrated through an optical analogy with two-dimensional photonic crystals.
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页数:4
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