The impact of high-k dielectrics in nanocrystal flash memories

被引：2

作者：

Freire, VN ^{[1
]}

de Sousa, JS ^{[1
]}

机构：

[1] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil

来源：

Quantum Sensing and Nanophotonic Devices II | 2005年 / 5732卷

关键词：

quantum dots; high-k dielectrics; single electron tunneling;

D O I：

10.1117/12.588362

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The consequences of the use of high-k dielectrics in nanocrystal based non-volatile flash memories focusing on the electrical and electronic properties are investigated through computational simulations. In the light of these results, we discuss several aspects which must be addressed for the design of such devices. We focus on nanocrystals flash memories with HfO2 and SiO2 for analysis. Due to significant reductions of the the single-electron tunneling time and improvements on the data retention, high-k dielectrics offers important improvements for the non-volatile flash memories technology.

引用

页码：547 / 555

页数：9

共 27 条

[1] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J].

BARDEEN, J .

PHYSICAL REVIEW LETTERS, 1961, 6 (02) :57-&

[2] Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films [J].

Callegari, A ;

Cartier, E ;

Gribelyuk, M ;

Okorn-Schmidt, HF ;

Zabel, T .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6466-6475

[3] Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure [J].

Choi, WK ;

Chim, WK ;

Heng, CL ;

Teo, LW ;

Ho, V ;

Ng, V ;

Antoniadis, DA ;

Fitzgerald, EA .

APPLIED PHYSICS LETTERS, 2002, 80 (11) :2014-2016

[4] Effects of crystallographic orientations on the charging time in silicon nanocrystal flash memories [J].

de Sousa, JS ;

Leburton, JP ;

Thean, AV ;

Freire, VN ;

da Silva, EF .

APPLIED PHYSICS LETTERS, 2003, 82 (16) :2685-2687

[5] Three-dimensional self-consistent simulation of the charging time response in silicon nanocrystal flash memories [J].

de Sousa, JS ;

Thean, AV ;

Leburton, JP ;

Freire, VN .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) :6182-6187

[6] Field effect transistors with SrTiO3 gate dielectric on Si [J].

Eisenbeiser, K ;

Finder, JM ;

Yu, Z ;

Ramdani, J ;

Curless, JA ;

Hallmark, JA ;

Droopad, R ;

Ooms, WJ ;

Salem, L ;

Bradshaw, S ;

Overgaard, CD .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1324-1326

[7]

GOLAPAN S, 2000, APPL PHYS LETT, V80, P4416

[8] Fast and long retention-time nano-crystal memory [J].

Hanafi, HI ;

Tiwari, S ;

Khan, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1553-1558

[9] Interfacial reaction in poly Si1-xGex/ZrO2 with Ge content in poly Si1-xGex films [J].

Kang, SK ;

Min, BG ;

Yoo, JH ;

Nam, SW ;

Ko, DH ;

Kang, HB ;

Yang, CW ;

Cho, MH .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (12) :G113-G115

[10] Memory characterization of SiGe quantum dot flash memories with HfO2 and SiO2 tunneling dielectrics [J].

Kim, DW ;

Kim, T ;

Banerjee, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (09) :1823-1829

← 1 2 3 →