Interfacial reaction in poly Si1-xGex/ZrO2 with Ge content in poly Si1-xGex films

被引：4

作者：

Kang, SK ^{[1
]}

Min, BG

Yoo, JH

Nam, SW

Ko, DH

Kang, HB

Yang, CW

Cho, MH

机构：

[1] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea

[2] Sungkyunkwan Univ, Sch Met & Mat Engn, Suwon, South Korea

[3] Stanford Univ, Sch Mat Sci & Engn, Stanford, CA 94305 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 12期

关键词：

D O I：

10.1149/1.1516907

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The interfacial reaction between poly Si1-xGex (x = 0, 0.2, 0.4) and ZrO2 films after annealing was investigated to use ZrO2 films as an alternative gate dielectric. In the poly Si/ZrO2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si1-xGex (x = 0.2, 0.4)/ZrO2, silicate formation was the main reaction after annealing at 900degreesC for 30 min. In addition, after annealing at 800degreesC, the silicate layer was observed only in the poly Si0.6Ge0.4/ZrO2 system. (C) 2002 The Electrochemical Society.

引用

页码：G113 / G115

页数：3

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