Interfacial reactions in the thin film Y2O3 on chemically oxidized Si(100) substrate systems

被引：44

作者：

Kang, SK

Ko, DH

Kim, EH

Cho, MH

Whang, CN

机构：

[1] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Phys, Atom Scale Surface Sci Res Ctr, Seoul 120749, South Korea

来源：

THIN SOLID FILMS | 1999年 / 353卷 / 1-2期

关键词：

Y2O3; SiO2; interfacial reaction; yttrium silicate; oxidation; metal-insulator-semiconductor structure; metal-ferroelectric-insulator-semiconductor; structure;

D O I：

10.1016/S0040-6090(99)00418-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the interfacial reaction between ICB deposited Y2O3 film and chemically oxidized (100) silicon substrates upon annealing in Ar and O-2 gas ambients using transmission electron microscopy (TEM) and X-ray diffractometry (XRD), We observed the growth of the SiO2 layer between the Y2O3 films and the Si substrate after annealing treatments in O-2 gas and Ar gas ambients. The growth of the SiO2 layer is due to the diffusion of the oxygen species through Y2O3 films, and subsequent reaction with the silicon substrates. We also found that yttrium silicate layer is formed between the SiO2 layer and Y2O3 films upon annealing treatments. (C) 1999 Elsevier Science S.A. All rights reserved.

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页码：8 / 11

页数：4

相关论文

共 21 条

[1] THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].

BRAVMAN, JC ;

SINCLAIR, R .

JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01) :53-61

[2] Growth stage of crystalline Y2O3 film on Si(100) grown by an ionized cluster beam deposition [J].

Cho, MH ;

Ko, DH ;

Jeong, K ;

Whangbo, SW ;

Whang, CN ;

Choi, SC ;

Cho, SJ .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2909-2914

[3] Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer [J].

Choi, SC ;

Cho, MH ;

Whangbo, SW ;

Whang, CN ;

Kang, SB ;

Lee, SI ;

Lee, MY .

APPLIED PHYSICS LETTERS, 1997, 71 (07) :903-905

[4]

CHOI SC, 1993, J KOREAN PHYS SOC, V31, P144

[5] GROWTH AND DIELECTRIC CHARACTERIZATION OF YTTRIUM-OXIDE THIN-FILMS DEPOSITED ON SI BY RF-MAGNETRON SPUTTERING [J].

CRANTON, WM ;

SPINK, DM ;

STEVENS, R ;

THOMAS, CB .

THIN SOLID FILMS, 1993, 226 (01) :156-160

[6] ELECTRICAL CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR DIODES WITH ZRO2/SIO2 DIELECTRIC FILMS [J].

FUKUMOTO, H ;

MORITA, M ;

OSAKA, Y .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :5210-5212

[7] STUDY OF THERMALLY OXIDIZED YTTRIUM FILMS ON SILICON [J].

GURVITCH, M ;

MANCHANDA, L ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1987, 51 (12) :919-921

[8] Effects of rapid thermal process on structural and electrical characteristics of Y2O3 thin films by rf-magnetron sputtering [J].

Horng, RH ;

Wuu, DS ;

Yu, JW ;

Kung, CY .

THIN SOLID FILMS, 1996, 289 (1-2) :234-237

[9] INTERMEDIATE AMORPHOUS LAYER FORMATION MECHANISM AT THE INTERFACE OF EPITAXIAL CEO2 LAYERS AND SI SUBSTRATES [J].

INOUE, T ;

OHSUNA, T ;

OBARA, Y ;

YAMAMOTO, Y ;

SATOH, M ;

SAKURAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04) :1765-1767

[10] YTTRIUM-OXIDE BASED METAL-INSULATOR SEMICONDUCTOR STRUCTURES ON SILICON [J].

KALKUR, TS ;

KWOR, RY ;

DEARAUJO, CAP .

THIN SOLID FILMS, 1989, 170 (02) :185-189