INVESTIGATION OF MOS CAPACITORS WITH THIN ZRO2 LAYERS AND VARIOUS GATE MATERIALS FOR ADVANCED DRAM APPLICATIONS

被引：84

作者：

SHAPPIR, J

ANIS, A

PINSKY, I

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1109/T-ED.1986.22510

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：442 / 449

页数：8

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