Subthreshold characteristics of polysilicon TFTs

被引：18

作者：

Deng, Wanling ^{[1
]}

Zheng, Xueren ^{[1
]}

Chen, Rongsheng ^{[1
]}

Liu, Yuan ^{[1
]}

机构：

[1] S China Univ Technol, Inst Microelect, Guangzhou 510640, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 05期

关键词：

subthreshold; poly-Si TFTs; surface potential; drain current;

D O I：

10.1016/j.sse.2007.10.048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new analytical polysilicon thin film transistors (poly-Si TFTs) subthreshold current model is presented in this paper. The model is based oil the surface potential in subthreshold regime. When assuming ail exponential distribution of defect states density, surface potential calculation is derived by using the Lambert W function, which benefits from computational efficiency and is suitable for implementation in circuit simulation. In order to model the subthreshold characteristics, we have calculated the drain current and subthreshold swing. The subthreshold variation with temperature and kink effect is studied. The off-current around flat-band voltage is also calculated. The results are compared with the available experimental data and an excellent agreement has been obtained. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：695 / 703

页数：9

共 20 条

[1]

Arora N., 1993, MOSFET MODELS VLSI C

[2] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[3]

CHESTER CL, 1993, IEDM, P497

[4] On the Lambert W function [J].

Corless, RM ;

Gonnet, GH ;

Hare, DEG ;

Jeffrey, DJ ;

Knuth, DE .

ADVANCES IN COMPUTATIONAL MATHEMATICS, 1996, 5 (04) :329-359

[5] DETERMINATION OF BULK STATES AND INTERFACE STATES DISTRIBUTIONS IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].

DIMITRIADIS, CA ;

TASSIS, DH ;

ECONOMOU, NA ;

LOWE, AJ .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) :2919-2919

[6] DETERMINATION OF GAP STATE DENSITY IN POLYCRYSTALLINE SILICON BY FIELD-EFFECT CONDUCTANCE [J].

FORTUNATO, G ;

MIGLIORATO, P .

APPLIED PHYSICS LETTERS, 1986, 49 (16) :1025-1027

[7] MODEL FOR THE ABOVE-THRESHOLD CHARACTERISTICS AND THRESHOLD VOLTAGE IN POLYCRYSTALLINE SILICON TRANSISTORS [J].

FORTUNATO, G ;

MIGLIORATO, P .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2463-2467

[8] THE SUB-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM-TRANSISTORS [J].

FORTUNATO, G ;

MEAKIN, DB ;

MIGLIORATO, P .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11) :2124-2127

[9] Determination of interface and bulk traps in the subthreshold region of polycrystalline silicon thin-film transistors [J].

Hastas, NA ;

Tassis, DH ;

Dimitriadis, CA ;

Kamarinos, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (09) :1991-1994

[10] Unified substrate current model for MOSFETs [J].

Iniguez, B ;

Fjeldly, TA .

SOLID-STATE ELECTRONICS, 1997, 41 (01) :87-94

← 1 2 →