Unified substrate current model for MOSFETs

被引：19

作者：

Iniguez, B ^{[1
]}

Fjeldly, TA ^{[1
]}

机构：

[1] NORWEGIAN UNIV SCI & TECHNOL,DEPT PHYS ELECT,N-7034 TRONDHEIM,NORWAY

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 01期

关键词：

D O I：

10.1016/S0038-1101(96)00132-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical single-piece MOSFET substrate current model for circuit simulation is presented. The model, combined with a unified and continuous-channel current model, is valid and continuous through all operating regimes (including weak inversion), for both conventional and LDD MOSFETs. To include the weak avalanche regime the effects of the voltage drop in the substrate resistance have been accounted for in the channel and substrate currents, and in the total charge equations. The accuracy of the model (for currents and their derivatives) has been confirmed by comparison with measurements. The model is very useful for the design of submicron CMOS circuits. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：87 / 94

页数：8

共 26 条

[1] 2-DIMENSIONAL ENERGY-DEPENDENT MODELS FOR THE SIMULATION OF SUBSTRATE CURRENT IN SUBMICRON MOSFETS [J].

AGOSTINELLI, VM ;

BORDELON, TJ ;

WANG, XL ;

HASNAT, K ;

YEAP, CF ;

LEMERSAL, DB ;

TASCH, A ;

MAZIAR, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (10) :1784-1795

[2] IMPACT IONIZATION MODELING USING SIMULATION OF HIGH-ENERGY TAIL DISTRIBUTIONS [J].

AHN, JG ;

YAO, CS ;

PARK, YJ ;

MIN, HS ;

DUTTON, RW .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (09) :348-350

[3] PCIM - A PHYSICALLY-BASED CONTINUOUS SHORT-CHANNEL IGFET MODEL FOR CIRCUIT SIMULATION [J].

ARORA, ND ;

RIOS, R ;

HUANG, CL ;

RAOL, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) :988-997

[4] MOSFET SUBSTRATE CURRENT MODEL FOR CIRCUIT SIMULATION [J].

ARORA, ND ;

SHARMA, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) :1392-1398

[5] MOS SMALL-SIGNAL CONDUCTANCES IN THE WEAK AVALANCHE MULTIPLICATION REGION [J].

CSERVENY, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (05) :1233-1235

[6] THRESHOLD VOLTAGE MODELING AND THE SUBTHRESHOLD REGIME OF OPERATION OF SHORT-CHANNEL MOSFETS [J].

FJELDLY, TA ;

SHUR, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) :137-145

[7]

HONG S, 1993, P ISDRS 93, P257

[8] AN ANALYTICAL MODEL FOR THE LATERAL CHANNEL ELECTRIC-FIELD IN LDD STRUCTURES [J].

HU, Y ;

BOOTH, RVH ;

WHITE, MH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (10) :2254-2264

[9] AN ANALYTIC SATURATION MODEL FOR DRAIN AND SUBSTRATE CURRENTS OF CONVENTIONAL AND LDD MOSFETS [J].

HUANG, GS ;

WU, CY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (07) :1667-1677

[10]

HUANG JH, IEDM 92, P569

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