The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

被引：83

作者：

Wang, Lu-Hao ^{[1
]}

Yang, Wen ^{[1
]}

Sun, Qing-Qing ^{[1
]}

Zhou, Peng ^{[1
]}

Lu, Hong-Liang ^{[1
]}

Ding, Shi-Jin ^{[1
]}

Zhang, David Wei ^{[1
]}

机构：

[1] Fudan Univ, State Key Lab ASIC & Syst, Dept Microelect, Shanghai 200433, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 06期

关键词：

THIN-FILMS;

D O I：

10.1063/1.3681366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen migration is reported as key factors of resistive switching in graphene oxide (GO) based memories by different groups. A flexible nonvolatile resistive switching memory based on GO was fabricated through a spin-coating process. The speed of the SET and RESET operations of the GO memories was found to be significant asymmetric. The RESET speed is in the order of 100 ns under a -5 V voltage while the SET speed is three orders of magnitude slower (100 mu s) under a 5 V bias. The behavior of resistive switching speed difference is elucidated by voltage modulated oxygen diffusion barrier change. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681366]

引用

页数：4

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