The low temperature synthesis of Al doped ZnO films on glass and polymer using magnetron co-sputtering: Working pressure effect

被引：49

作者：

Chung, YM ^{[1
]}

Moon, CS ^{[1
]}

Jung, MJ ^{[1
]}

Han, JG ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Ctr Adv Plasma Surface Technol, Suwon 400746, South Korea

来源：

SURFACE & COATINGS TECHNOLOGY | 2005年 / 200卷 / 1-4期

关键词：

Al doped ZnO; co-sputtering; polymer; working pressure;

D O I：

10.1016/j.surfcoat.2005.02.197

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transparent conductive At doped ZnO thin films were prepared on glass and polymer substrates by unipolar pulsed d.c. co-CFUBM (Closed Field Unbalanced Magnetron) sputtering at ZnO and At targets without introducing any oxygen at room temperature. The lowest resistivity of 1.2 m Omega cm as well as the transmittance of above 84% was obtained by controlling working pressure. But the resistivity is slightly increased up to 6.8 m Omega cm with time passing due to the unstable microstructure caused by the low temperature process. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：936 / 939

页数：4

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