Novel potentiometric silicon sensor for medical devices

被引：17

作者：

Schnakenberg, U

Lisec, T

Hintsche, R

Kuna, I

Uhlig, A

Wagner, B

机构：

[1] Fraunhofer-Inst. Siliziumtechnologie, D-14199 Berlin

[2] Institute of Biochemistry, Berlin

[3] Ctrl. Institute of Molecular Biology, Berlin

[4] Fraunhofer Inst. Siliziumtechnology, Berlin

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1996年 / 34卷 / 1-3期

关键词：

potentiometric sensor; silicon micromachining; Ag/AgCl/Ag thin film reference electrode;

D O I：

10.1016/S0925-4005(96)01854-0

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The fabrication process for a potentiometric silicon sensor is described. The sensor was fabricated in bulk silicon micromachining using double side wafer processing. A small channel was etched anisotropically in (100) silicon. The back side groove was metallized. To form an ion-selective electrode an ion-selective membrane was deposited in the channel. Additionally, a novel type of Ag/AgCl/Ag reference electrode was integrated on the front side of the chip. The small size of the sensor allows application in catheter systems.

引用

页码：476 / 480

页数：5

共 7 条

[1] POTENTIOMETRIC SILICON MICROSENSOR FOR NITRATE AND AMMONIUM [J].