Integration of GaN with Si using a AuGe-mediated wafer bonding technique

被引:21
作者
Funato, M [1 ]
Fujita, S [1 ]
Fujita, S [1 ]
机构
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
关键词
D O I
10.1063/1.1331638
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter describes integration of GaN with Si using a AuGe alloy as a bonding material. GaN is first grown on GaAs and then GaN/GaAs/AuGe/Si and GaAs/GaN/AuGe/Si structures are fabricated by wafer bonding. For the latter structure, the GaAs substrate is removed by mechanical and chemical etching. From the current-voltage measurements of both structures, it is found that the bonded interfaces do not obstruct the carrier transport. Furthermore, the optical reflection measurements reveal that AuGe works well as a mirror, which is a suitable characteristic for the integration of GaN light-emitting devices with Si. (C) 2000 American Institute of Physics. [S0003-6951(00)03750-5].
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页码:3959 / 3961
页数:3
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