Photoluminescence from impurity codoped and compensated Si nanocrystals

被引：71

作者：

Fujii, M ^{[1
]}

Yamaguchi, Y ^{[1
]}

Takase, Y ^{[1
]}

Ninomiya, K ^{[1
]}

Hayashi, S ^{[1
]}

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 21期

关键词：

D O I：

10.1063/1.2135214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) properties of B and P codoped and compensated Si nanocrystals were studied. The compensation of carriers in nanocrystals was confirmed by the annihilation of confined-carrier optical absorption in the infrared region. In the PL spectra obtained under the resonant excitation condition, the codoped samples did not exhibit structures related to momentum-conserving phonons, which were clearly observed for pure Si nanocrystals. The result strongly suggests that in impurity codoped Si nanocrystals, nonphonon quasidirect optical transition is the dominant recombination path for electron-hole pairs, and thus impurity codoping is a possible approach to further improving PL efficiency of Si nanocrystals. (c) 2005 American Institute of Physics.

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页数：3

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