Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities

被引：130

作者：

Fujii, M ^{[1
]}

Yamaguchi, Y ^{[1
]}

Takase, Y ^{[1
]}

Ninomiya, K ^{[1
]}

Hayashi, S ^{[1
]}

机构：

[1] Kobe Univ, Fac Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 07期

关键词：

D O I：

10.1063/1.1779955

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of B and P codoping on photoluminescence (PL) properties of Si nanocrystals (nc-Si) are studied systematically. It is shown that the PL intensity of codoped nc-Si is always higher than that of either P- or B-doped nc-Si. The intensity is sometimes even higher than that of pure nc-Si at relatively low P and B concentrations and low annealing temperatures. By doping P and B simultaneously to very high concentrations, the PL peak shifts below the band gap of bulk Si. (C) 2004 American Institute of Physics.

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页码：1158 / 1160

页数：3

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