Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment

被引：71

作者：

Driad, R ^{[1
]}

Lu, ZH ^{[1
]}

Charbonneau, S ^{[1
]}

McKinnon, WR ^{[1
]}

Laframboise, S ^{[1
]}

Poole, PJ ^{[1
]}

McAlister, SP ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.121941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface properties of InGaAs(100) after ex situ treatment with (NH4)(2)S solution were investigated by photoluminescence (PL) and high-energy resolution x-ray photoelectron spectroscopy. The As 3d, Ga 2p(3/2), and In 3d(5/2) core level studies show that the surface is free of native oxides and is terminated by S after treatment. A dramatic increase (similar to 40 times) in the PL efficiency was observed on undoped InGaAs(100) surfaces after sulfur passivation. This S treatment has also been applied to the passivation of the extrinsic base of InGaAs/InP heterojunction bipolar transistors (HBTs). The effectiveness of the sulfur passivation treatment was confirmed by the resulting devices which exhibited de current gain values of up to 200 at very low collector currents (nA). Further, the sulfur passivated HBTs do not show any dependence on the perimeter-to-area (P/A) ratio of the emitter junction which is of interest for high frequency characteristics while maintaining high current gain. (C) 1998 American Institute of Physics.

引用

页码：665 / 667

页数：3

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