Rubrene polycrystalline transistor channel achieved through in situ vacuum annealing

被引：40

作者：

Park, Se-W. ^{[1
]}

Jeong, S. H. ^{[1
]}

Choi, Jeong-M. ^{[1
]}

Hwang, Jung Min ^{[1
]}

Kim, Jae Hoon ^{[1
]}

Im, Seongil ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 03期

关键词：

D O I：

10.1063/1.2756379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the rubrene polycrystalline film growth for its thin film transistor (TFT) applications. Amorphous rubrene thin film was initially obtained on 200-nm-thick SiO2/Si substrate at 40 degrees C in a vacuum chamber by thermal evaporation but in situ long time postannealing at the elevated temperatures of 60-80 degrees C transformed the amorphous phase into crystalline. Based on an optimum condition to cover the whole channel area with polycrystalline film, the authors have fabricated a rubrene TFT with a relatively high field effect mobility of 0.002 cm(2)/V s, an on/off ratio of similar to 10(4), and a low threshold voltage of -9 V. (C) 2007 American Institute of Physics.

引用

页数：3

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