Ion beam synthesis of beta-SiC at 950 degrees C and structural characterization

被引：10

作者：

Frangis, N

Nejim, A

Hemment, PLF

Stoemenos, J

VanLanduyt, J

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] ARISTOTELIAN UNIV THESSALONIKI,DEPT PHYS,GR-54006 THESSALONIKI,GREECE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 112卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01236-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.

引用

页码：325 / 329

页数：5

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