HIGH-DOSE IMPLANTATION OF MEV CARBON ION INTO SILICON

被引：15

作者：

CHAYAHARA, A

KIUCHI, M

HORINO, Y

FUJII, K

SATOU, M

机构：

[1] Government Industrial Research Institute, Ikeda, 563, Osaka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 01期

关键词：

MEV ION IMPLANTATION; SIC; INFRARED ABSORPTION; RUTHERFORD BACKSCATTERING; CHANNELING;

D O I：

10.1143/JJAP.31.139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of SiC in silicon wafer by 1.5 MeV C+ implantation to doses of 1.5 x 10(18) ions/ cm2 followed by annealing is demonstrated using infrared absorption spectra and Rutherford backscattering (RBS). From the results of He+ backscattering under the channeling condition, the surface layer of Si is observed to remain crystalline even before annealing

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页码：139 / 140

页数：2

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