CHARACTERISTICS OF THE SYNTHESIS OF BETA-SIC BY THE IMPLANTATION OF CARBON-IONS INTO SILICON

被引：46

作者：

KIMURA, T

KAGIYAMA, S

YUGO, S

机构：

来源：

THIN SOLID FILMS | 1982年 / 94卷 / 03期

关键词：

D O I：

10.1016/0040-6090(82)90295-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：191 / 198

页数：8

相关论文

共 19 条

[1] STRUCTURE AND OPTICAL-PROPERTIES OF SILICON IMPLANTED BY HIGH-DOSES OF 70 AND 310 KEV CARBON-IONS
AKIMCHENKO, IP
KISSELEVA, KV
KRASNOPEVTSEV, VV
TOURYANSKI, AG
VAVILOV, VS
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 7 - 12
[2] AKIMCHENKO IP, 1979, SOV PHYS SEMICOND+, V13, P219
[3] FORMATION OF SIC IN SILICON BY ION IMPLANTATION
BORDERS, JA
PICRAUX, ST
BEEZHOLD, W
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (11) : 509 - &
[4] EPITAXIAL SILICON LAYERS GROWN ON ION-IMPLANTED SILICON-NITRIDE LAYERS
DEXTER, RJ
PICRAUX, ST
WATELSKI, SB
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 455 - 457
[5] FORMATION OF SIC AND SI-3N-4 IN SILICON BY ION-IMPLANTATION
EDELMAN, FL
KUZNETSOV, ON
LEZHEIKO, LV
LUBOPYTOVA, EV
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 13 - 15
[6] THERMAL OXIDATION OF SILICON AFTER ION-IMPLANTATION
FRITZSCH.CR
ROTHEMUN.W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1603 - 1605
[7] OPTICAL WAVEGUIDING IN PROTON-IMPLANTED GAAS
GARMIRE, E
STOLL, H
YARIV, A
HUNSPERGER, RG
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 87 - +
[8] FORMATION OF ABRUPT INTERFACES BETWEEN SURFACE SILICON AND BURIED SIO2 LAYERS BY VERY HIGH-DOSE OXYGEN-ION IMPLANTATION
HAYASHI, T
OKAMOTO, H
HOMMA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : 1005 - 1006
[9] HEIM G, 1975, APPL PHYS, V7, P231
[10] STRUCTURE AND ANNEALING PROPERTIES OF SILICON-CARBIDE THIN-LAYERS FORMED BY IMPLANTATION OF CARBON-IONS IN SILICON
KIMURA, T
KAGIYAMA, S
YUGO, S
[J]. THIN SOLID FILMS, 1981, 81 (04) : 319 - 327