LOW-TEMPERATURE FORMATION OF BETA-TYPE SILICON-CARBIDE BY ION-BEAM MIXING

被引：15

作者：

KIMURA, T

TATEBE, Y

KAWAMURA, A

YUGO, S

ADACHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 12期

关键词：

D O I：

10.1143/JJAP.24.1712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1712 / 1715

页数：4

共 16 条

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[4]

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[5] POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON [J].

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[10] CHARACTERISTICS OF THE SYNTHESIS OF BETA-SIC BY THE IMPLANTATION OF CARBON-IONS INTO SILICON [J].

KIMURA, T ;

KAGIYAMA, S ;

YUGO, S .

THIN SOLID FILMS, 1982, 94 (03) :191-198

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