学术探索
学术期刊
新闻热点
数据分析
智能评审

Spatial control over atomic layer deposition using microcontact-printed resists

被引：45
作者：
Jiang, Xirong
Chen, Rong
Bent, Stacey F. [1 ]
机构：
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[3] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
来源：
SURFACE & COATINGS TECHNOLOGY | 2007年 / 201卷 / 22-23期
关键词：
platinum; haffnium dioxide; atomic layer deposition; microcontact printing; self-assembled monolayer;
D O I：
10.1016/j.surfcoat.2007.04.126
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Area-selective thin film growth by atomic layer deposition (ALD) has been achieved on octadecyltrichlorosilane (ODTS) patterned substrates. Patterned hydrophobic self-assembled monolayers (SAMs) were first transferred to silicon and yttria-stabilized zirconia (YSZ) substrates by microcontact printing. Subsequently, films of either HfO2 or Pt were grown selectively on the SAM-free regions of the surface, while ALD was blocked in regions where ODTS was present. The deposited pattern was readily observed through scanning electron microscopy and scanning Auger imaging, demonstrating that soft lithography is a simple and promising method to achieve area-selective ALD. The selectivity of the soft lithography-based method and the subsequent pattern resolution was compared for Pt versus HfO2. It was found that using ODTS films, it is easier to achieve complete deactivation of Pt than HfO2. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：8799 / 8807
页数：9
相关论文
共 50 条
[1]   Atomic layer deposition of noble metals:: Exploration of the low limit of the deposition temperature [J].
Aaltonen, T ;
Ritala, M ;
Tung, YL ;
Chi, Y ;
Arstila, K ;
Meinander, K ;
Leskelä, M .
JOURNAL OF MATERIALS RESEARCH, 2004, 19 (11) :3353-3358
[2]   Reaction mechanism studies on atomic layer deposition of ruthenium and platinum [J].
Aaltonen, T ;
Rahtu, A ;
Ritala, M ;
Leskelä, M .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (09) :C130-C133
[3]   Atomic layer deposition of platinum thin films [J].
Aaltonen, T ;
Ritala, M ;
Sajavaara, T ;
Keinonen, J ;
Leskelä, M .
CHEMISTRY OF MATERIALS, 2003, 15 (09) :1924-1928
[4]   Controlling local disorder in self-assembled monolayers by patterning the topography of their metallic supports [J].
Aizenberg, J ;
Black, AJ ;
Whitesides, GM .
NATURE, 1998, 394 (6696) :868-871
[5]   SPONTANEOUSLY ORGANIZED MOLECULAR ASSEMBLIES .1. FORMATION, DYNAMICS, AND PHYSICAL-PROPERTIES OF NORMAL-ALKANOIC ACIDS ADSORBED FROM SOLUTION ON AN OXIDIZED ALUMINUM SURFACE [J].
ALLARA, DL ;
NUZZO, RG .
LANGMUIR, 1985, 1 (01) :45-52
[6]   Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications [J].
Biercuk, MJ ;
Monsma, DJ ;
Marcus, CM ;
Becker, JS ;
Gordon, RG .
APPLIED PHYSICS LETTERS, 2003, 83 (12) :2405-2407
[7]   Patterning disorder in monolayer resists for the fabrication of sub-100-nm structures in silver, gold, silicon, and aluminum [J].
Black, AJ ;
Paul, KE ;
Aizenberg, J ;
Whitesides, GM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1999, 121 (36) :8356-8365
[8]   Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification [J].
Chen, R ;
Kim, H ;
McIntyre, PC ;
Porter, DW ;
Bent, SF .
APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3
[9]   Chemistry for positive pattern transfer using area-selective atomic layer deposition [J].
Chen, R ;
Bent, SF .
ADVANCED MATERIALS, 2006, 18 (08) :1086-+
[10]   Investigation of self-assembled monolayer resists for hafnium dioxide atomic layer deposition [J].
Chen, R ;
Kim, H ;
McIntyre, PC ;
Bent, SF .
CHEMISTRY OF MATERIALS, 2005, 17 (03) :536-544
12345