Reaction mechanism studies on atomic layer deposition of ruthenium and platinum

被引：203

作者：

Aaltonen, T ^{[1
]}

Rahtu, A ^{[1
]}

Ritala, M ^{[1
]}

Leskelä, M ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, Inorgan Chem Lab, FIN-00014 Helsinki, Finland

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2003年 / 6卷 / 09期

关键词：

D O I：

10.1149/1.1595312

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Reaction mechanisms in atomic layer deposition (ALD) of ruthenium from bis(cyclopentadienyl)ruthenium (RuCp2) and oxygen were studied in situ with a quadrupole mass spectrometer (QMS) and a quartz crystal microbalance (QCM). In addition, QMS was used to study ALD of platinum from (methylcyclopentadienyl) trimethylplatinum (MeCpPtMe3) and oxygen. The QMS studies showed that the reaction by-products H2O and CO2 were released during both the oxygen and the metal precursor pulses. Adsorbed oxygen layer on the metal surface thus oxidizes part of the ligands during the metal precursor pulse. The remaining ligand species become oxidized and a new layer of adsorbed oxygen forms on the surface during the following oxygen pulse. The QCM analysis of the ruthenium process showed a mass decrease during the RuCp2 pulse and a mass increase during the oxygen pulse, which further supports the proposed mechanism. (C) 2003 The Electrochemical Society.

引用

页码：C130 / C133

页数：4

共 16 条

[1] Atomic layer deposition of platinum thin films [J].