Ballistic electron emission microscopy studies of Au/molecule/n-GaAs diodes

被引：34

作者：

Li, WJ

Kavanagh, KL ^{[1
]}

Matzke, CM

Talin, AA

Léonard, F

Faleev, S

Hsu, JWP

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[2] Sandia Natl Labs, Livermore, CA 94551 USA

[3] Sandia Natl Labs, Albuquerque, NM 87123 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2005年 / 109卷 / 13期

关键词：

D O I：

10.1021/jp0501648

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present nanometer-scale resolution, ballistic electron emission microscopy (BEEM) studies of Au/octanedithiol/n-GaAs (001) diodes. The presence of the molecule dramatically increases the BEEM threshold voltage and displays an unusual transport signature as compared to reference Au/GaAs diodes. Furthermore, BEEM images indicate laterally inhomogeneous interfacial structure. We present calculations that address the role of the molecular layer at the interface. Our results indicate that spatially resolved measurements add new insight to studies using conventional spatial-averaging techniques.

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页码：6252 / 6256

页数：5

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