Growth, microstructure, and resistivity of RuO2 thin films grown by metal-organic chemical vapor deposition

Polycrystalline RuO2 thin films were grown by metal-organic chemical vapor deposition (MOCVD) on both SiO2/Si(001) and Pt/Ti/SiO2/Si(001) substrates, Films having a controllable and reproducible structural texture and phase purity were synthesized by carefully controlling deposition parameters. Moderate growth temperatures (similar to 350 degrees C) and low growth rates (<30 Angstrom/min) produced highly (110)-textured RuO2 films. Highly (101)-textured RuO2 films were favored at slightly lower temperatures (similar to 300 degrees C) and much higher growth rates (>30 Angstrom/min). The most conductive RuO3 films had resistivities of 34 to 40 mu Omega-cm at 25 degrees C, an average grain size of 65 +/- 15 nm, and a surface roughness (rms) of 3 to 10 nm, Both single-phase Ru and mixed Ru/RuO2 phase material were also fabricated at low temperatures (<350 degrees C) by using lower oxygen flow concentrations (<10%).