Crystal order in pentacene thin films grown on SiO2 and its influence on electronic band structure

被引：32

作者：

Matsubara, R. ^{[1
]}

Sakai, M. ^{[1
]}

Kudo, K. ^{[1
]}

Yoshimoto, N. ^{[2
]}

Hirosawa, I. ^{[3
]}

Nakamura, M. ^{[1
]}

机构：

[1] Chiba Univ, Dept Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan

[2] Iwate Univ, Dept Mat Sci & Engn, Morioka, Iwate 0208551, Japan

[3] Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795198, Japan

来源：

ORGANIC ELECTRONICS | 2011年 / 12卷 / 01期

关键词：

Pentacene; Grazing incidence X-ray diffraction; In-plane crystallite size; Electronic band structure; Organic thin-film transistor; HOMO-band-edge fluctuation; X-RAY-DIFFRACTION; MOLECULAR ARRANGEMENT; ORGANIC TRANSISTORS; DIELECTRICS; MICROSCOPY; MORPHOLOGY; MOBILITY; SI(001)-(2X1)-H; PHTHALOCYANINE; MONOLAYER;

D O I：

10.1016/j.orgel.2010.10.024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To clarify relationship between crystallographic and electronic structures in pentacene polycrystalline films grown on SiO2, in-plane crystallite size and random strain of the films were analyzed by grazing incidence X-ray diffraction (GIXD) using synchrotron radiation source. The results indicate that the diffraction peak width is not determined by random strain but by crystallite size. The crystallite size remains constant within the range of 25-50 nm even when the size of polycrystalline domain, or crystal grain, increases more than tenfold by elevating the growth temperature. The crystallite size agrees well with characteristic periods of both HOMO-band-edge fluctuations in pentacene films, which was reported in our previous paper, and surface corrugation of the substrate. These facts strongly suggest that roughness of the SiO2 surface limits the crystallite size and the interruption of long-range order in pentacene lattice introduces the HOMO-band-edge fluctuation. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：195 / 201

页数：7

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