Line shape of the no-phonon luminescence of excitons bound to phosphorus in carbon-doped silicon

被引：17

作者：

Safonov, AN

Davies, G

Lightowlers, EC

机构：

[1] Physics Department, Kingșs College London, Strand

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.54.4409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Isoelectronic substitutional carbon atoms, present as an impurity in crystalline silicon, are shown to split the no-phonon luminescence line produced by the decay of excitons bound to phosphorus donors. The centroid of the doublet moves to lower photon energy in proportion to the carbon concentration. The splitting and shift can be explained quantitatively as a perturbation of the transition by the strain produced by the carbon.

引用

页码：4409 / 4412

页数：4

共 20 条

[1]

ARTEMENKO SN, 1975, SOV PHYS SEMICOND+, V8, P1405

[2] EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON [J].

BAKER, JA ;

TUCKER, TN ;

MOYER, NE ;

BUSCHERT, RC .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4365-&

[3] ANNEALING KINETICS OF THE DICARBON RADIATION-DAMAGE CENTER IN CRYSTALLINE SILICON [J].

DAVIES, G ;

KUN, KT ;

READE, T .

PHYSICAL REVIEW B, 1991, 44 (22) :12146-12157

[4] THEORETICAL INVESTIGATION OF RANDOM SI-C ALLOYS [J].

DEMKOV, AA ;

SANKEY, OF .

PHYSICAL REVIEW B, 1993, 48 (04) :2207-2214

[5]

ESHELBY JD, 1956, SOLID STATE PHYS, V3, P79

[6] Electric field broadening of gallium acceptor states in compensated Ge:Ga,As [J].

Itoh, KM ;

Walukiewicz, W ;

Beeman, JW ;

Haller, EE ;

Kim, HJ ;

Mayur, AJ ;

Sciacca, MD ;

Ramdas, AK ;

Buczko, R ;

Farmer, JW ;

Ozhogin, VI .

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- :127-131

[7] GROWTH AND PROPERTIES OF STRAINED SI1-X-YGEXCY LAYERS [J].

JAIN, SC ;

OSTEN, HJ ;

DIETRICH, B ;

RUCKER, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (10) :1289-1302

[8] ULTRAHIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF EXCITONS BOUND TO BORON IN SILICON UNDER UNIAXIAL-STRESS [J].

KARASYUK, VA ;

STEELE, AG ;

MAINWOOD, A ;

LIGHTOWLERS, EC ;

DAVIES, G ;

BRAKE, DM ;

THEWALT, MLW .

PHYSICAL REVIEW B, 1992, 45 (20) :11736-11743

[9] INTRINSIC SPLITTING OF THE ACCEPTOR GROUND-STATE IN SILICON [J].

KARASYUK, VA ;

THEWALT, MLW ;

AN, S ;

LIGHTOWLERS, EC .

PHYSICAL REVIEW LETTERS, 1994, 73 (17) :2340-2343

[10]

KIMINSKII AS, 1981, JETP LETT, V33, P132

← 1 2 →