Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals

被引:14
作者
Diener, J [1 ]
Kovalev, D
Heckler, H
Polisski, G
Künzner, N
Koch, F
Efros, AL
Rosen, M
机构
[1] Tech Univ Munich, Phys Dept E16, D-85747 Garching, Germany
[2] USN, Res Lab, Nanostruct Opt Sect, Washington, DC 20375 USA
关键词
porous silicon; photoluminescence;
D O I
10.1016/S0925-3467(01)00036-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report efficient low-temperature anti-Stokes photoluminescence (upconverted photoluminescence= UPL) at resonant excitation of coupled silicon nanocrystals (NCs) in porous silicon (PSi). This photoluminescence is absent in strongly oxidized porous silicon and oxidized silicon nanocrystals. The UPL is a result of resonant excitation of electron-hole (e-h) pairs spatially separated in neighboring crystals with different band-gap. II is generated by the excitation of a second e-h pair in the larger of the two crystals and Anger ejection of a carrier into the smaller one, with the larger band-gap. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:135 / 139
页数:5
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