Photoluminescence up-conversion in GaAs/AlxGa1-xAs heterostructures

被引：39

作者：

Cheong, HM ^{[1
]}

Fluegel, B ^{[1
]}

Hanna, MC ^{[1
]}

Mascarenhas, A ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.58.R4254

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose GaAs/AlxGa1-xAs heterostructures as a model system to study the phenomenon of photoluminescence (PL) up-conversion and demonstrate low-temperature up-converted PL (UPL) in these heterostructures. We find that a mechanism to prevent up-converted carriers in the AlxGa1-xAs layer from thermalizing back to the GaAs layer is essential for efficient UPL. We also find that neither a type-II band alignment nor existence of long-lived intermediate states is an essential requirement of UPL. The results of time-resolved UPL measurements are interpreted within the current models.

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收藏

页码：R4254 / R4257

页数：4

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