Inter-layer screening length to electric field in thin graphite film

被引：74

作者：

Miyazaki, Hisao ^{[1
,2
]}

Odaka, Shunsuke ^{[1
,3
]}

Sato, Takashi ^{[4
,5
]}

Tanaka, Sho ^{[4
,5
]}

Goto, Hidenori ^{[2
,4
,5
]}

Kanda, Akinobu ^{[2
,4
,5
]}

Tsukagoshi, Kazuhito ^{[1
,2
,6
]}

Ootuka, Youiti ^{[4
,5
]}

Aoyagi, Yoshinobu ^{[1
,2
,3
]}

机构：

[1] RIKEN, Wako, Saitama 3510198, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

[3] Tokyo Inst Technol, Midori Ku, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan

[4] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan

[5] Univ Tsukuba, Tsukuba Res Ctr Interdisciplinary Mat Sci, Tsukuba, Ibaraki 3058571, Japan

[6] Adv Ind Sci & Technol, Higashi Ku, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 03期

关键词：

D O I：

10.1143/APEX.1.034007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric conduction in thin graphite film was tuned by two gate electrodes to clarify how the gate electric field induces electric carriers in thin graphite. The graphite was sandwiched between two gate electrodes arranged in a top and bottom gate configuration. A scan of the top gate voltage generates a resistance peak in ambiploar response. The ambipolar peak is shifted by the bottom gate voltage, where the shift rate depends on the graphite thickness. The thickness-dependent peak shift was clarified in terms of the inter-layer screening length to the electric field in the double-gated graphite film. The screening length of 1.2 nm was experimentally obtained. (C) 2008 The Japan Society of Applied Physics.

引用

页码：0340071 / 0340073

页数：3

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