Improved Electrical Stability in the Al Doped ZnO Thin-Film-Transistors Grown by Atomic Layer Deposition

被引：50

作者：

Ahn, Cheol Hyoun ^{[1
]}

Kong, Bo Hyun ^{[1
]}

Kim, Hyoungsub ^{[1
]}

Choz, Hyung Koun ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 02期

关键词：

TRANSPARENT;

D O I：

10.1149/1.3525278

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Bottom-gate oxide thin-film-transistors (TFTs) with improved electrical stability were fabricated with Al doped ZnO (AZO) channel layers grown by atomic layer deposition (ALD) at a relatively low temperature. The ALD growth at 110 degrees C and the addition of 1-5 atom % Al dopant provided the thin films with reliable semiconducting characteristics, and the TFT devices fabricated with the 1 and 3 atom % AZO films showed a good field effect mobility and on-off current ratio. The transfer curves for the AZO channel TFTs exhibited improved hysteresis loop and positive gate bias stress results compared to those for the pure ZnO TFTs. The improved electrical stability was attributed to the coarsening of the crystal size and the preferred orientation along the nonpolar direction afforded by the addition of Al. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3525278] All rights reserved.

引用

页码：H170 / H173

页数：4

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