Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition

被引：17

作者：

Kawamura, Yumi ^{[1
]}

Horita, Masahiro ^{[1
]}

Uraoka, Yukiharu ^{[2
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

DEPENDENCE; TIME;

D O I：

10.1143/JJAP.49.04DF19

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated zinc oxide (ZnO) thin films fabricated by atomic layer deposition (ALD) for their application in thin-film transistors (TFTs). The fabricated TFTs were annealed at various temperatures in various ambient gases. The characteristics of TFTs annealed in oxygen ambient at the temperature of up to 400 degrees C indicated improvements with no degradation of subthreshold swing or large shift in threshold voltage. From the annealing temperature dependences of transfer characteristics and X-ray diffraction patterns, we found that the improvements in electrical characteristics are attributed to the crystalline modification of ZnO films. The TFTs annealed at 400 degrees C in O-2 ambient indicate improved stability against the bias stress. Secondary ion mass spectrometry analysis revealed a marked decrease in the hydrogen concentration of the ZnO channel layer after the annealing at 400 degrees C. (C) 2010 The Japan Society of Applied Physics

引用

页数：6

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