Characteristics of the ZnO thin film transistor by atomic layer deposition at various temperatures

被引：111

作者：

Kwon, Semyung ^{[1
]}

Bang, Seokhwan ^{[1
]}

Lee, Seungjun ^{[1
]}

Jeon, Sunyeol ^{[1
]}

Jeong, Wooho ^{[1
]}

Kim, Hyungchul ^{[1
]}

Gong, Su Cheol ^{[2
]}

Chang, Ho Jung ^{[2
]}

Park, Hyung-Ho ^{[3
]}

Jeon, Hyeongtag ^{[1
]}

机构：

[1] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea

[2] Dankook Univ, Dept Elect Engn, Cheonan Shi 330714, Chungnam, South Korea

[3] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 03期

关键词：

ROOM-TEMPERATURE; CHANNEL LAYER; OXIDE; THICKNESS; GROWTH;

D O I：

10.1088/0268-1242/24/3/035015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO thin films were deposited by atomic layer deposition (ALD) at various temperatures and the resulting electrical and chemical properties were examined. The fraction of O-H bonds in ZnO films decreased from 0.39 to 0.24 with increasing processing temperatures. The O/Zn ratio decreased from 0.90 at 70 degrees C to 0.78 at 130 degrees C. The carrier concentration and resistivity changed sharply with decreasing temperature. The ZnO thin film transistors (TFTs) were fabricated at processing temperatures of 70 to 130 degrees C and the electrical properties of the TFT were as follows: the field-effect mobility ranged from 8.82 x 10(-3) to 6.11 x 10(-3) cm(2) V-1 s(-1), the on/off current ratio ranged from 1.28 x 10(6) to 2.43 x 10(6), the threshold voltage ranged from -12.5 to 14.7 V and the subthreshold swing ranged from 1.21 to 24.1 V/decade. The electrical characteristics of the ZnO TFT were enhanced as the processing temperature decreased.

引用

页数：6

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