Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature

被引：139

作者：

Cho, Doo-Hee

Yang, Shinhyuk ^{[1
]}

Byun, Chunwon ^{[1
]}

Shin, Jaeheon ^{[1
]}

Ryu, Min Ki ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

Chung, Sung Mook ^{[1
]}

Cheong, Woo-Seok ^{[1
]}

Yoon, Sung Min ^{[1
]}

Chu, Hye-Yong ^{[1
]}

机构：

[1] ETRI, Transparent Elect Team, Taejon 305350, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 14期

关键词：

D O I：

10.1063/1.2998612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 degrees C. The AZTO TFT exhibited a field effect mobility (mu(FET)) of 10.1 cm(2)/V s, a turn-on voltage (V-on) of 0.4 V, a subthreshold swing (S/S) of 0.6 V/decade, and an on/off ratio (I-on/I-off) of 10(9). (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2998612]

引用

收藏

页数：3

相关论文

共 13 条

[1]

[Anonymous], P SID

[2] Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide [J].

Barquinha, P. ;

Pimentel, A. ;

Marques, A. ;

Pereira, L. ;

Martins, R. ;

Fortunato, E. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1749-1752

[3] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[4] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[5] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[6] Factors controlling electron transport properties in transparent amorphous oxide semiconductors [J].

Hosono, Hideo ;

Nomura, Kenji ;

Ogo, Youichi ;

Uruga, Tomoya ;

Kamiya, Toshio .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) :2796-2800

[7] Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application [J].

Hosono, Hideo .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :851-858

[8] Zinc tin oxide transistors on flexible substrates [J].

Jackson, W. B. ;

Herman, G. S. ;

Hoffman, R. L. ;

Taussig, C. ;

Braymen, S. ;

Jeffery, F. ;

Hauschildt, J. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1753-1755

[9] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[10]

Lee Jung-Youn, 2008, V451, P625, DOI 10.1007/978-1-59745-102-4_42