Zinc tin oxide transistors on flexible substrates

被引：40

作者：

Jackson, W. B.

Herman, G. S.

Hoffman, R. L.

Taussig, C.

Braymen, S.

Jeffery, F.

Hauschildt, J.

机构：

[1] Hewlett Packard Corp, Div Res, Palo Alto, CA 94304 USA

[2] Hewlett Packard Corp, Corvallis, OR 97330 USA

[3] Iowa Thin Film, Boone, IA 50036 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

amorphous semiconductors; thin film transistors; sputtering;

D O I：

10.1016/j.jnoncrysol.2005.11.080

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Flexible transistors were fabricated by sputter deposition of zinc tin oxide (ZTO) onto plasma-enhanced chemical vapor deposited gate dielectrics formed on flexible polyimide substrates with aluminum gate electrodes. Using output characteristics, the contact resistance of Al/ZTO contacts was found to be in the range of 100 k Omega causing significant on-current degradation. ZTO transistors with indium tin oxide (ITO) contacts exhibited high on-currents of 1.5 mA, on/off ratios of 10(6), subthreshold voltage slopes of 1.6 V/decade, threshold voltages of -8.8 V, and mobilities of 14 cm(2) V-1 s(-1). Capacitance measurements are shown to be useful for assessing contact resistance. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1753 / 1755

页数：3

共 7 条

[1] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].