Spin Relaxation in Single-Layer and Bilayer Graphene

被引:315
作者
Han, Wei [1 ]
Kawakami, R. K. [1 ]
机构
[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA
基金
美国国家科学基金会;
关键词
ELECTRICAL DETECTION; PRECESSION; TRANSPORT;
D O I
10.1103/PhysRevLett.107.047207
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate spin relaxation in graphene spin valves and observe strongly contrasting behavior for single-layer graphene (SLG) and bilayer graphene (BLG). In SLG, the spin lifetime (tau(s)) varies linearly with the momentum scattering time (tau(p)) as carrier concentration is varied, indicating the dominance of Elliot-Yafet (EY) spin relaxation at low temperatures. In BLG, tau(s) and tau(p) exhibit an inverse dependence, which indicates the dominance of Dyakonov-Perel spin relaxation at low temperatures. The different behavior is due to enhanced screening and/or reduced surface sensitivity of BLG, which greatly reduces the impurity-induced EY spin relaxation.
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页数:4
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