A compact model for flicker noise in MOS transistors for analog circuit design

被引:29
作者
Arnaud, A [1 ]
Galup-Montoro, C
机构
[1] Univ Republica, Fac Ingn, IIE, GME, Montevideo, Uruguay
[2] Univ Fed Santa Catarina, Dept Engn Eletr, LCI, Florianopolis, SC, Brazil
关键词
1/f noise; compact modeling; flicker noise; MOSFET; noise;
D O I
10.1109/TED.2003.815143
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Designers need accurate models to estimate 1/f noise in MOS transistors as a function of their size, bias point, and technology. Conventional models present limitations; they usually do not consistently represent the series-parallel associations of transistors and may not provide adequate results for all the operating regions, particularly moderate inversion. In this brief, we present a consistent, physics-based, one-equation-all-regions model for flicker noise developed with the aid of a one-equation-all-regions do model of the MOS transistor.
引用
收藏
页码:1815 / 1818
页数:4
相关论文
共 11 条