Correlation between the stability and trap parameters of amorphous oxide thin film transistors

被引：8

作者：

Chong, Eugene ^{[1
,2
]}

Park, Ki-Ho ^{[1
]}

Cho, Eun Ah ^{[3
]}

Choi, Jun Young ^{[1
]}

Kim, Bosul ^{[1
,2
]}

You, Dong-Youn ^{[1
]}

Jang, Gun-Eik ^{[3
]}

Lee, Sang Yeol ^{[1
,4
]}

机构：

[1] Korea Adv Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea

[2] Univ Sci & Technol, Taejon 305333, South Korea

[3] Chungbuk Natl Univ, Dept Adv Mat Engn, Cheongju 361763, South Korea

[4] Cheongju Univ, Dept Semicond Engn, Cheongju 360764, Chungbuk, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2012年 / 91卷

关键词：

Thin film transistor; Stability; Hf-In-Zn-O; TEMPERATURE; PERFORMANCE;

D O I：

10.1016/j.mee.2011.10.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the temperature dependence phenomena in stability and trap related parameters in amorphous-hafnium-indium-zinc-oxide (a-HIZO) thin film transistors (TFTs) with different Hf-ratio. The optimized 7HIZO TFT shows large mu(FE) of > 11.1 cm(2)/V s and good stability based in large falling-rate (R-F) of 0.18 eV/V, trapping-time (tau) of 1.0 x 10(7) s and small subthreshold-swing (SS) of 0.74 V/dec. Relation between thermally activated energy and Hf-ratio clearly indicated Hf acted as carrier suppressors since the increase of Hf-ratio in a-HIZO films. The Hf greatly affected the overall device performance as well as the stability. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：50 / 53

页数：4

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