Effect of Trap Density on the Stability of SiInZnO Thin-Film Transistor under Temperature and Bias-Induced Stress

被引：17

作者：

Chong, Eugene ^{[1
,2
]}

Chun, Yoon Soo ^{[1
]}

Lee, Sang Yeol ^{[1
,2
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea

[2] Univ Sci & Technol, Taejon 305333, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 02期

关键词：

INSTABILITY;

D O I：

10.1149/1.3518518

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We fabricated high-performance thin-film transistors (TFTs) with a silicon-indium-zinc-oxide (SIZO ) channel layer deposited by radio frequency sputtering at room temperature. The SIZO-TFTs passivated with poly (methyl methacrylate) showed a field effect mobility of 8 cm(2)/V . s and a subthreshold swing of 90 mV/decade even with a process temperature below 150 degrees C. Si acted as a stabilizer and carrier suppressor in the In-Zn-O system. In addition, the temperature and bias-induced stability of SIZO-TFTs along with oxygen effects are experimentally studied. (C) 2010 The Electrochemical Society. (DOI: 10.1149/1.3518518) All rights reserved.

引用

页码：H96 / H98

页数：3

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