Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress

被引：60

作者：

Jahinuzzaman, SM ^{[1
]}

Sultana, A ^{[1
]}

Sakariya, K ^{[1
]}

Servati, P ^{[1
]}

Nathan, A ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 02期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.1993766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the time-dependent shift in the threshold voltage of amorphous silicon thin-film transistor stressed with constant drain current. We observe a nonsaturating power-law time dependence, which is in contrast to the conventional stretched exponential that saturates at prolonged stress time. The result is consistent with the carrier-induced defect creation model and corroborates the nonlinear dependence of the rate of defect creation on the band-tail carrier density. (c) 2005 American Institute of Physics.

引用

页数：3

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