Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 °C

被引：82

作者：

Chong, Eugene ^{[1
,2
]}

Chun, Yoon Soo ^{[1
]}

Lee, Sang Yeol ^{[1
,2
]}

机构：

[1] Korea Adv Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea

[2] Univ Sci & Technol, Taejon 305333, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 10期

关键词：

DEPENDENCE; MODEL; XPS;

D O I：

10.1063/1.3479925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous silicon indium zinc oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below 150 degrees C. The a-SIZO TFT exhibited a field effect mobility of 21.6 cm(2)/V s and an on/off ratio of 10(7). The stabilities of a-SIZO TFT and indium zinc oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage (V(th)) compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in Vth in a-SIZO TFT without deteriorating mobility of higher than 21.6 cm(2)/V s. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479925]

引用

页数：3

共 23 条

[1] Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature [J].

Cho, Doo-Hee ;

Yang, Shinhyuk ;

Byun, Chunwon ;

Shin, Jaeheon ;

Ryu, Min Ki ;

Park, Sang-Hee Ko ;

Hwang, Chi-Sun ;

Chung, Sung Mook ;

Cheong, Woo-Seok ;

Yoon, Sung Min ;

Chu, Hye-Yong .

APPLIED PHYSICS LETTERS, 2008, 93 (14)

[2] High stability of amorphous hafnium-indium-zinc-oxide thin film transistor [J].

Chong, Eugene ;

Jo, Kyoung Chul ;

Lee, Sang Yeol .

APPLIED PHYSICS LETTERS, 2010, 96 (15)

[3] Effect of Si doping on electrical and optical properties of ZnO thin films grown by sequential pulsed laser deposition [J].

Das, A. K. ;

Misra, P. ;

Kukreja, L. M. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (16)

[4] IMPROVING THE ANTICORROSION AND MECHANICAL-BEHAVIOR OF PACVD TIN [J].

HE, JW ;

BAI, CD ;

XU, KW ;

HU, NS .

SURFACE & COATINGS TECHNOLOGY, 1995, 74-5 (1-3) :387-393

[5] Zn-ln-O based thin-film transistors: Compositional dependence [J].

Itagaki, N. ;

Iwasaki, T. ;

Kumomi, H. ;

Den, T. ;

Nomura, K. ;

Kamiya, T. ;

Hosono, H. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (08) :1915-1919

[6]

Kamiya T, 2009, J DISP TECHNOL, V5, P462, DOI [10.1109/JDT.2009.2034559, 10.1109/JDT.2009.2022064]

[7] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[8] Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors [J].

Kim, Chang-Jung ;

Kim, Sangwook ;

Lee, Je-Hun ;

Park, Jin-Seong ;

Kim, Sunil ;

Park, Jaechul ;

Lee, Eunha ;

Lee, Jaechul ;

Park, Youngsoo ;

Kim, Joo Han ;

Shin, Sung Tae ;

Chung, U-In .

APPLIED PHYSICS LETTERS, 2009, 95 (25)

[9] Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire [J].

Kim, Kyoungwon ;

Debnath, Pulak Chandra ;

Park, Dong-Hoon ;

Kim, Sangsig ;

Lee, Sang Yeol .

APPLIED PHYSICS LETTERS, 2010, 96 (08)

[10] Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress [J].

Lee, Sangwon ;

Jeon, Kichan ;

Park, Jun-Hyun ;

Kim, Sungchul ;

Kong, Dongsik ;

Kim, Dong Myong ;

Kim, Dae Hwan ;

Kim, Sangwook ;

Kim, Sunil ;

Hur, Jihyun ;

Park, Jae Chul ;

Song, Ihun ;

Kim, Chang Jung ;

Park, Youngsoo ;

Jung, U-In .

APPLIED PHYSICS LETTERS, 2009, 95 (13)

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