A HfO2 Thin Film Resistive Switch Based on Conducting Atomic Force Microscopy

被引：16

作者：

Son, J. Y. ^{[1
]}

Kim, D. -Y. ^{[2
]}

Kim, H. ^{[2
]}

Maeng, W. J. ^{[3
]}

Shin, Y. -S. ^{[4
]}

Shin, Y. -H. ^{[5
,6
,7
]}

机构：

[1] Kyung Hee Univ, Coll Appl Sci, Dept Appl Phys, Suwon 446701, South Korea

[2] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[3] Samsung Inst Technol, Display Lab, Nongseo Dong 446712, Yongin, South Korea

[4] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[5] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[6] Univ Ulsan, Dept Chem, Ulsan 680749, South Korea

[7] Univ Ulsan, EHSRC, Ulsan 680749, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 08期

关键词：

atomic force microscopy; gold; hafnium compounds; metallisation; nanoelectronics; nanofabrication; nanostructured materials; platinum; random-access storage; thin film devices; RANDOM-ACCESS MEMORY; DIBLOCK COPOLYMER TEMPLATES; HIGH-DENSITY; LAYER DEPOSITION; NANOWIRE ARRAYS;

D O I：

10.1149/1.3574526

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A HfO2 thin film is incorporated into a resistive random access memory (RRAM) device based on conducting atomic force microscopy (CAFM). The RRAM element consists of an Au nanodot connected to a CAFM tip as an anode, a HfO2 channel, and a Pt electrode as a cathode. A nearly uniform Au nanodot array with a mean Au dot diameter of 25 nm is formed using a DBC nano-template and metallization techniques. The nanoscale HfO2 RRAM element exhibits unipolar resistive switching behavior similar to that of a typical RRAM bit. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3574526] All rights reserved.

引用

页码：H311 / H313

页数：3

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