The integration of nanoscale porous silicon light emitters: materials science, properties, and integration with electronic circuitry

被引：39

作者：

Fauchet, PM ^{[1
]}

机构：

[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA

来源：

JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

porous silicon; light emitting device; LED; nanoscale integration;

D O I：

10.1016/S0022-2313(98)00070-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The stability, efficiency, speed, and spectral range of light-emitting devices (LEDs) made of nanoscale porous silicon is improving. The first part of this paper discusses the preparation and properties of nanoscale silicon, with emphasis on porous silicon. In the second part, the properties of LEDs made of porous silicon are reviewed. In the third part, the integration of PSI LEDs with silicon microelectronic circuits is discussed. The paper ends with a short discussion of the prospects for realistic optoelectronic devices. (C) 1999 Published by Elsevier Science B.V. AU rights reserved.

引用

页码：53 / 64

页数：12

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