Atomic structure determination for GaAs(001)-(6x6) by STM

被引：24

作者：

McLean, JG ^{[1
]}

Kruse, P ^{[1
]}

Kummel, AC ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Chem, La Jolla, CA 92098 USA

来源：

SURFACE SCIENCE | 1999年 / 424卷 / 2-3期

基金：

美国国家科学基金会;

关键词：

chemisorption; chlorine; gallium arsenide; halogens; low energy electron diffraction (LEED); low index single crystal surfaces; scanning tunneling microscopy (STM); surface relaxation and reconstruction;

D O I：

10.1016/S0039-6028(98)00939-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present a model structure for the GaAs(001)-(6 x 6) reconstructed surface based on high-resolution scanning tunneling microscopy images. This surface has previously also been referred to as (1 x 6), (2 x 6), (3 x 6) and (2 x 6)/(3 x 6) mixed, and contributes to the "4 x 6" mixed surface. Phase coexistence with the Ga-rich c(8 x 2) is used to determine the basic structure. Chemically selective halogen (Cl-2) adsorption is used to distinguish Ga atoms from As atoms and to extract structural details that are not visible in scanning tunneling microscopy images of the clean surface. The structure is consistent with the electron-counting rule. Partial disorder appears in the structure. While some of the disorder is due to kinetic barriers to equilibrium, some is intrinsic to the structure. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：206 / 218

页数：13

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