Real time monitoring of pentacene growth on SiO2 from a supersonic source

被引：29

作者：

Hong, S. ^{[1
]}

Amassian, A. ^{[2
]}

Woll, A. R. ^{[3
]}

Bhargava, S. ^{[1
]}

Ferguson, J. D. ^{[2
]}

Malliaras, G. G. ^{[2
]}

Brock, J. D. ^{[4
]}

Engstrom, J. R. ^{[1
]}

机构：

[1] Cornell Univ, Sch Chem & Biom Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[3] Cornell Univ, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA

[4] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 25期

基金：

加拿大自然科学与工程研究理事会; 美国国家科学基金会; 新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2946497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film growth of pentacene on SiO2 using a supersonic source has been investigated with in situ real time synchrotron x-ray scattering and ex situ atomic force microscopy, focusing on the effects of incident kinetic energy E-i and growth rate GR on the evolution of surface roughness and the crystalline structure of the thin films. For the conditions examined here, E-i=2.5-7.2 eV and GR=0.0015-0.2 ML s(-1), the thin film phase is always observed. We find that while the effect of E-i on interlayer transport is minimal, at high growth rates, slightly smoother films are observed. (C) 2008 American Institute of Physics.

引用

页数：3

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