Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers

被引：26

作者：

Chow, WW

Amano, H

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 02期

关键词：

laser modes; laser resonators; nitride compounds; optical self-focusing; piezoelectric effect; quantum-well lasers; semiconductor lasers; semiconductor device modeling;

D O I：

10.1109/3.903077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mode behavior in group-iii nitride quantum-well lasers, Beam filamentation due to self-focusing in the gain medium is found to limit fundamental-mode output to narrow stripe lasers or to operation close to lasing threshold, Differences between nitride and conventional near-infrared semiconductor lasers arise because of band structure differences, in particular, the presence of a strong quantum-confined Stark effect in the former. Increasing mirror reflectivities in plane-plane resonators to reduce lasing threshold current tends to exacerbate the filamentation problem. On the other hand, a negative-branch unstable resonator is found to mitigate filament effects, enabling fundamental-mode operation far above threshold in broad-area lasers.

引用

页码：265 / 273

页数：9

共 21 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].

Akasaki, I ;

Amano, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408

[2]

[Anonymous], 1991, SEMICONDUCTORS+, DOI DOI 10.1007/978-3-642-45681-7

[3]

Bogatov A. P., 1980, Soviet Journal of Quantum Electronics, V10, P620, DOI 10.1070/QE1980v010n05ABEH010170

[4] Microscopic theory of optical nonlinearities and spontaneous emission lifetime in group-III nitride quantum wells [J].

Chow, W ;

Kira, M ;

Koch, SW .

PHYSICAL REVIEW B, 1999, 60 (03) :1947-1952

[5] Microscopic theory of gain for an InGaN/AlGaN quantum well laser [J].

Chow, WW ;

Wright, AF ;

Girndt, A ;

Jahnke, F ;

Koch, SW .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2608-2610

[6] Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers [J].

Chow, WW ;

Amano, H ;

Akasaki, I .

APPLIED PHYSICS LETTERS, 2000, 76 (13) :1647-1649

[7]

Chow WW., 1999, SEMICONDUCTOR LASER, DOI 10.1007/978-3-662-03880-2

[8]

CHOW WW, 1994, SEMICONDUCTOR LASER, pCH10

[9] k center dot p method for strained wurtzite semiconductors [J].

Chuang, SL ;

Chang, CS .

PHYSICAL REVIEW B, 1996, 54 (04) :2491-2504

[10] ETCHED-MIRROR UNSTABLE-RESONATOR SEMICONDUCTOR-LASERS [J].

CRAIG, RR ;

CASPERSON, LW ;

STAFSUDD, OM ;

YANG, JJJ ;

EVANS, GA ;

DAVIDHEISER, RA .

ELECTRONICS LETTERS, 1985, 21 (02) :62-63

← 1 2 3 →