Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers

被引：37

作者：

Chow, WW

Amano, H

Akasaki, I

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 13期

关键词：

D O I：

10.1063/1.126123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Filamentation and, consequently, output beam quality in InGaN quantum-well lasers are found to be strong functions of quantum-well width because of the interplay of quantum-confined Stark effect and many-body interactions. For an In0.2Ga0.8N/GaN gain medium, the antiguiding factor in a thick 4 nm quantum well is considerably smaller than that for a narrow 2 nm one. As a result, lasers with the thicker quantum well maintain fundamental-mode operation with wider stripe widths and at significantly higher excitation levels. (C) 2000 American Institute of Physics. [S0003-6951(00)01313-9].

引用

页码：1647 / 1649

页数：3

共 14 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].