Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

被引：227

作者：

Youtsey, C

Romano, LT

Adesida, I

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

[3] Xerox Palo Alto Res Ctr, Palo Alto, CA 94306 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 06期

关键词：

D O I：

10.1063/1.122005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium nitride is used to fabricate high brightness blue and green light-emitting diodes in spite of high densities of extended structural defects. We describe a photoelectrochemical etching process that reveals the dislocation microstructure of n-type GaN films by selectively removing material between dislocations. The GaN whiskers formed by the etching have diameters between 10 and 50 nm and lengths of up to 1 mu m. A correlation between the etched features and threading dislocations in the unetched film is confirmed through transmission electron microscopy studies. The whisker formation is believed to be indicative of electrical activity at dislocations in GaN. (C) 1998 American Institute of Physics. [S0003-6951(98)02932-5].

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页码：797 / 799

页数：3

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