Dependence of electric field on STM tip preparation

被引:7
作者
Huang, DH
Grey, F
Aono, M
机构
[1] JST, ERATO, Aono Atomcraft Project, Tsukuba, Ibaraki 3002635, Japan
[2] Inst Phys & Chem Res, Surface & Interface Lab, Wako, Saitama 3510106, Japan
[3] Osaka Univ, Dept Precis Sci & Technol, Osaka 5650871, Japan
关键词
tip displacement; electric field; tip preparation; scanning tunnelling microscope (STM);
D O I
10.1016/S0169-4332(98)00175-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Voltage pulses applied between an STM tip and a surface can modify the surface on the nanometer scale due to electric-field-induced evaporation. However, at present, different groups have achieved surface modification with quite different bias conditions, and it is still difficult to obtain high reproducibility in such experiments. In this paper, we measure the tip displacement during a pulse at constant tunnelling current, and deduce that the electric field produced by the pulse depends in a systematic way on tip preparation, The results show how differences in tip preparation can be a major source of irreproducibility for STM nanofabrication and atom manipulation. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:909 / 913
页数:5
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