Epitaxial growth of ZnO films

被引：202

作者：

Triboulet, R

Perrière, J

机构：

[1] CNRS, Lab Phys Solides & Cristallogenese, F-92195 Meudon, France

[2] Univ Paris 06, Phys Solides Grp, F-75015 Paris, France

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 2003年 / 47卷 / 2-3期

关键词：

molecular beam epitaxy; physical vapor deposition processes; metalorganic chemical vapor deposition; laser epitaxy; ZnO; semiconducting II-VI materials;

D O I：

10.1016/j.pcrysgrow.2005.01.003

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

After summing up the main physical properties of ZnO and its subsequent applications the aim of this article is to review the growth of ZnO epitaxial films by PLD, MBE, MOCVD and sputtering under their various aspects, substrates, precursors, reaction chemistry, assessment of the layers etc...., keeping constantly in mind some key issues for the device applications of ZnO in optoelectronics, surface acoustic filters and spintronics, amongst which the growth of high quality epitaxial layers of both n- or p-type conductivity, the possibility of dissolving transition elements in the layers, the growth of ZnO related alloys and heterostructures are of major significance. (c) 2005 Elsevier Ltd. All rights reserved.

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页码：65 / 138

页数：74

相关论文

共 348 条

[21] HIGH-QUALITY ZNO THIN-FILMS ON INP SUBSTRATES PREPARED BY RADIO-FREQUENCY MAGNETRON SPUTTERING .2. SURFACE-ACOUSTIC-WAVE DEVICE FABRICATION [J].

CHANG, SJ ;

SU, YK ;

SHEI, YP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (02) :385-388

[22] HIGH-QUALITY ZNO THIN-FILMS ON INP SUBSTRATES PREPARED BY RADIO-FREQUENCY MAGNETRON SPUTTERING .1. MATERIAL STUDY [J].

CHANG, SJ ;

SU, YK ;

SHEI, YP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (02) :381-384

[23] High-quality ZnO thin films prepared by two-step thermal oxidation of the metallic Zn [J].

Chen, SJ ;

Liu, YC ;

Ma, JG ;

Zhao, DX ;

Zhi, ZZ ;

Lu, YM ;

Zhang, JY ;

Shen, DZ ;

Fan, XW .

JOURNAL OF CRYSTAL GROWTH, 2002, 240 (3-4) :467-472

[24] Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer [J].

Chen, YF ;

Ko, HJ ;

Hong, SK ;

Yao, T .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :559-561

[25] Plasma-assisted molecular beam epitaxy of ZnO thin films on sapphire substrates with an MgO buffer [J].

Chen, YF ;

Ko, HJ ;

Hong, SK ;

Inaba, K ;

Segawa, Y ;

Yao, T .

JOURNAL OF CRYSTAL GROWTH, 2001, 227 :917-922

[26] Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy [J].

Chen, YF ;

Bagnall, DM ;

Zhu, ZQ ;

Sekiuchi, T ;

Park, KT ;

Hiraga, K ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

JOURNAL OF CRYSTAL GROWTH, 1997, 181 (1-2) :165-169

[27] Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers [J].

Chen, YF ;

Tuan, NT ;

Segawa, Y ;

Ko, H ;

Hong, S ;

Yao, T .

APPLIED PHYSICS LETTERS, 2001, 78 (11) :1469-1471

[28] Confinement-enhanced biexciton binding energy in ZnO/ZnMgO multiple quantum wells [J].

Chia, CH ;

Makino, T ;

Tamura, K ;

Segawa, Y ;

Kawasaki, M ;

Ohtomo, A ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2003, 82 (12) :1848-1850

[29] Observation of exciton-polariton emissions from a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy [J].

Chichibu, SF ;

Sota, T ;

Fons, PJ ;

Ivata, K ;

Yamada, A ;

Matsubara, K ;

Niki, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (8B) :L935-L937

[30] Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates [J].

Chichibu, SF ;

Yoshida, T ;

Onuma, T ;

Nakanishi, H .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (02) :874-877

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