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Formation and characterization of (Zn1-xMnx)O diluted magnetic semiconductors grown on (0001) Al2O3 substrates

被引：17
作者：
Kim, DS
Lee, S
Min, C
Kim, HM
Yuldashev, SU
Kang, TW
Kim, DY
Kim, TW
机构：
[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[2] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 12期
关键词：
(Zn1-xMnx)O; diluted magnetic semiconductors; magnetron sputtering; ferromagnetism; ferromagnetic transition temperature;
D O I：
10.1143/JJAP.42.7217
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
(Zn1-xMnx)O diluted magnetic semiconductors (DMSs) grown on (0001) Al2O3 substrates by radio frequency magnetron sputtering were investigated with the aim of producing a material with a high ferromagnetic transition temperature (T-c) X-ray diffraction, photoluminescence, and Hall-effect measurements showed that the grown (Zn1-xMnx)O thin films were p-type crystalline semiconductors with single phases. Magnetization curve as a function of magnetic field at 5 K indicated that ferromagnetism existed in the (Zn1-xMnx)O thin films, and magnetization curve as a function of temperature showed that the T-c of the (Zn0.93Mn0.07)O thin film was 70 K. These observations can improve the understanding of the increase in Tc for (Zn1-xMnx)O DMSs grown on (0001) Al2O3 substrates.
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收藏
页码：7217 / 7220
页数：4
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